planar tri-gate tunnel field effect transistor (Nanoelectronics Research Corporation)
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Nanoelectronics Research Corporation
planar tri-gate tunnel field effect transistor
Planar Tri Gate Tunnel Field Effect Transistor, supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/planar+tri-gate+tunnel+field+effect+transistor/planar+tri+gate+tunnel+field+effect+transistor/10__1063_slash_1__4996094-0-4-204
Average 90 stars, based on 1 article reviews
Planar Tri Gate Tunnel Field Effect Transistor, supplied by Nanoelectronics Research Corporation, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/planar+tri-gate+tunnel+field+effect+transistor/planar+tri+gate+tunnel+field+effect+transistor/10__1063_slash_1__4996094-0-4-204
Average 90 stars, based on 1 article reviews
planar tri-gate tunnel field effect transistor - by Bioz Stars,
2026-09
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Clinical Proteomics:Article Title: Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Article Snippet: Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Nupur Navlakha and Abhinav Kranti Citation: Journal of Applied Physics 122, 044502 (2017); doi: 10.1063/1.4996094 View online: http://dx.doi.org/10.1063/1.4996094 View Table of Contents: http://aip.scitation.org/toc/jap/122/4 Published by the American Institute of Physics Articles you may be interested in Thermoelectric cooperative effect in three-terminal elastic transport through a quantum dot Journal of Applied Physics 122, 044301 (2017); 10.1063/1.4995532 A multifunctional plasma and deposition sensor for the characterization of plasma sources for film deposition and etching Journal of Applied Physics 122, 044503 (2017); 10.1063/1.4995278 Spin wave generation by surface acoustic waves Journal of Applied Physics 122, 043904 (2017); 10.1063/1.4996102 Effects of magnetic field profile near anode on ion acceleration characteristics of a diverging magnetic field electrostatic thruster Journal of Applied Physics 122, 043302 (2017); 10.1063/1.4995286 Comparing Q-factor of electromagnetically induced transparency based on different space distribution quasidark mode resonator Journal of Applied Physics 122, 044501 (2017); 10.1063/1.4995950 Near-infrared measurement of water temperature near a 1-mm-diameter magnetic sphere and its heat generation rate under induction heating Journal of Applied Physics 122, 044901 (2017); 10.1063/1.4995284 Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Nupur Navlakha and Abhinav Krantia) Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Simrol 453552, India (Received 13 April 2017; accepted 12 July 2017; published online 27 July 2017) Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory.. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film.. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. Control:Article Title: Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Article Snippet: Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Nupur Navlakha and Abhinav Kranti Citation: Journal of Applied Physics 122, 044502 (2017); doi: 10.1063/1.4996094 View online: http://dx.doi.org/10.1063/1.4996094 View Table of Contents: http://aip.scitation.org/toc/jap/122/4 Published by the American Institute of Physics Articles you may be interested in Thermoelectric cooperative effect in three-terminal elastic transport through a quantum dot Journal of Applied Physics 122, 044301 (2017); 10.1063/1.4995532 A multifunctional plasma and deposition sensor for the characterization of plasma sources for film deposition and etching Journal of Applied Physics 122, 044503 (2017); 10.1063/1.4995278 Spin wave generation by surface acoustic waves Journal of Applied Physics 122, 043904 (2017); 10.1063/1.4996102 Effects of magnetic field profile near anode on ion acceleration characteristics of a diverging magnetic field electrostatic thruster Journal of Applied Physics 122, 043302 (2017); 10.1063/1.4995286 Comparing Q-factor of electromagnetically induced transparency based on different space distribution quasidark mode resonator Journal of Applied Physics 122, 044501 (2017); 10.1063/1.4995950 Near-infrared measurement of water temperature near a 1-mm-diameter magnetic sphere and its heat generation rate under induction heating Journal of Applied Physics 122, 044901 (2017); 10.1063/1.4995284 Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application Nupur Navlakha and Abhinav Krantia) Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Simrol 453552, India (Received 13 April 2017; accepted 12 July 2017; published online 27 July 2017) Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory.. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film.. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. |